Electric field induced slanting growth of silicon nanowires with enhanced hydrophobic property

<p>The etching process of Si nanowires under DC electric field was studied in this work. Interestingly, the growth direction of silicon nanowires became slanting when applied with DC electric intensity of 600 V/m, which greatly influenced the surface wettability ascribed to the variation of surface morphologies. The contact angle of slant Si nanowire was enhanced compared with vertical growth Si nanowire (132.4° vs. 86.8°).</p>